一、噴淋清洗

1、 Spray cleaning

上噴淋管路共有兩路，形成相互交叉噴淋，但去離子水不宜直接噴淋沖洗晶圓表面，因晶圓在水蝕作用下直接噴淋晶圓表面，易產(chǎn)生微粒污泥而污染晶圓表面，因此，在去離子水的噴淋過程中，需要對沖洗水壓、水量、方向和角度作出調(diào)整測試，以達到微粒污染少的較好效果。 良好的噴嘴所噴淋范圍涵蓋全部晶圓及片盒； 而不良的噴淋沖洗形狀，沒有涵蓋全部晶圓及片盒，未被噴淋沖洗的死角地帶，微粒、雜質(zhì)及化學(xué)藥液殘留含量仍然很高，而達不到良好的清洗效果。

There are two upper spray pipelines, which form cross spray. However, deionized water should not be sprayed directly to wash the wafer surface. Because the wafer directly sprays the wafer surface under the action of water erosion, it is easy to produce particulate sludge and pollute the wafer surface. Therefore, during the spraying process of deionized water, it is necessary to adjust and test the flushing water pressure, water volume, direction and angle, In order to achieve the better effect of less particle pollution. A good spray nozzle covers all wafers and cassettes; The poor spray flushing shape does not cover all wafers and cartridges, and the dead corner areas that have not been sprayed and flushed. The residual content of particles, impurities and chemical solution is still very high, which can not achieve good cleaning effect.

二、鼓泡沖浪清洗

2、 Bubble surfing cleaning

上噴淋同時，下噴淋管路由底部兩側(cè)不斷進水，而后由內(nèi)槽上沿四周溢出，這樣，每個晶圓片縫、各處邊角的去離子水都能連續(xù)得到更新。 同時，純凈氣體（氮氣或壓縮空氣）由下噴淋管路進入槽體。鼓泡有以下幾個作用：

At the same time of the upper spray, the lower spray pipe continuously enters water on both sides of the bottom, and then overflows from the upper edge of the inner groove around. In this way, the deionized water in each wafer slot and all corners can be continuously updated. Meanwhile, pure gas (nitrogen or compressed air) enters the tank through the lower spray pipeline. Bubbling has the following functions:

（1）增加了去離子水的沖刷力，對槽體本身有很好的自清洗作用；

(1) It increases the scouring force of deionized water and has a good self-cleaning effect on the tank itself;

（2）晶圓在水流中顫動，氣泡不能沾附其上，提高了沖洗效果；

(2) The wafer vibrates in the water flow, and the bubbles cannot adhere to it, which improves the flushing effect;

（3）氮氣鼓泡減少去離子水中的含氧量，避免在晶圓表面生成氧化物。

(3) Nitrogen bubbling reduces the oxygen content in deionized water and avoids the formation of oxides on the wafer surface.

三、超聲波清洗

3、 Ultrasonic cleaning

蘇州富怡達超聲波有限公司的QDR增加了超聲波功能選項，與鼓泡沖浪清洗交替作用，極大的提高了清洗效率，并有效降低DI水的消耗量。典型的應(yīng)用方法是：上噴淋+排放→上噴淋+下進水→超聲+上噴淋+溢流→鼓泡+上噴淋+溢流→快排放

The QDR of Suzhou fuyida ultrasonic Co., Ltd. has added the option of ultrasonic function to alternate with bubble surfing cleaning, which greatly improves the cleaning efficiency and effectively reduces the consumption of DI water. The typical application method is: upper spray + discharge → upper spray + lower water inlet → ultrasonic + upper spray + overflow → bubbling + upper spray + overflow → fast discharge

四、快沖快排

4、 Rush, row

噴淋注滿水時間和排水時間，對晶圓清洗質(zhì)量有很大影響。 因晶圓表面暴露在空氣中會接觸空氣中的氧分子或水汽，在常溫下，即會生長一層很薄的氧化層（約為 0.5~1 nm），這層自然氧化物的厚度與暴露在空氣中的時間長短有關(guān)， 因此，噴淋注滿水時間越長，晶圓暴露在空氣中的時間就會越長，因而形成的氧化層也越厚，這對晶圓清洗，是很不利的。 QDR 排水的時間越短，排水流速就會越大，有利于去離子水帶走晶圓表面上的微粒雜質(zhì)。因此，在 QDR 設(shè)計中，要盡可能的縮短噴淋注滿水時間和排水時間，實現(xiàn)快沖快排，整體效率也會得到提高。超聲波的QDR快排及注水時間指標(biāo)為：注入時間：≤120秒，排放時間：≤12秒。

The spray filling time and drainage time have a great impact on the wafer cleaning quality. Because the wafer surface is exposed to air, it will contact oxygen molecules or water vapor in the air. At room temperature, A very thin oxide layer will grow (about 0.5 ~ 1 nm). The thickness of this layer of natural oxide is related to the length of time exposed to the air. Therefore, the longer the spraying and filling time is, the longer the wafer will be exposed to the air, and the thicker the oxide layer will be formed, which is very unfavorable for wafer cleaning. The shorter the drainage time of QDR, the greater the drainage flow rate, which is conducive to the crystallization of deionized water Particulate impurities on the circular surface. Therefore, in the QDR design, it is necessary to shorten the spraying water filling time and drainage time as much as possible to realize rapid flushing and drainage, and the overall efficiency will be improved. The QDR fast discharge and water injection time indicators of fuyida ultrasonic are: injection time: ≤ 120 seconds, discharge time: ≤ 12 seconds.